2SK1211-01 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1211-01

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 90* nS

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 7 Ohm

Package: TO3PF

2SK1211-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK1211-01 Datasheet (PDF)

1.1. 2sk1211-01.pdf Size:94K _fuji

3.1. 2sk1211.pdf Size:63K _fuji

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1211 DESCRIPTION ·Drain Current –ID=2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltag

4.1. 2sk1213.pdf Size:61K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1213 DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V

4.2. 2sk1217.pdf Size:64K _upd

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1217 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 900 V

4.3. 2sk1215f.pdf Size:260K _upd

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.4. 2sk1215.pdf Size:140K _renesas

2SK1215 Silicon N-Channel MOS FET REJ03G0813-0200 (Previous ADE-208-1176) Rev.2.00 Aug.10.2005 Application VHF amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Gate 2. Drain 1 3. Source 2 *CMPAK is a trademark of Renesas Technology Corp. Rev.2.00 Aug 10, 2005 page 1 of 5 2SK1215 Absolute Maximum Ratings (Ta = 25�C) Item Symbol

4.5. 2sk1214.pdf Size:34K _panasonic

Power F-MOS FETs 2SK1214 2SK1214 Silicon N-Channel Power F-MOS Unit : mm Features 10.0� 0.2 4.2� 0.2 Low ON-resistance RDS(on) : RDS(on)1= 0.06?(typ) 5.5� 0.2 2.7� 0.2 High-speed switching : tf =110ns(typ) No secondary breakdown o3.1� 0.1 Low-voltage drive Applications DC-DC converter 1.3� 0.2 1.4� 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8� 0.1 Motor drive 2.54

4.6. 2sk1217-01r.pdf Size:170K _fuji