2SK3922-01 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3922-01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 67 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 52 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 360 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TFP
2SK3922-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3922-01 Datasheet (PDF)
2sk3922-01.pdf
2SK3922-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching Low on-resistanceOutline Drawings [mm]No secondary breadown Low driving powerAvalanche-proofTFPApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless othe
2sk3920-01.pdf
2SK3920-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220ABHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless
2sk3926-01mr.pdf
2SK3926-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25
2sk3924-01l-s-sj.pdf
2SK3924-01L,S,SJN-CHANNEL SILICON POWER MOSFETOutline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(
2sk3923-01.pdf
2SK3923-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220ABHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless
2sk3928-01.pdf
2SK3928-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220ABFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
2sk3921-01l-s-sj.pdf
2SK3921-01L,S,SJFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesHigh speed switching Low on-resistanceNo secondary breadown Low driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersUPS (Uninterruptible Power Supply)See to P4Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
2sk3925-01.pdf
2SK3925-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220ABFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
2sk3929.pdf
2SK3929-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25C
2sk3927-01l-s-sj.pdf
2SK3927-01L,S,SJN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(T
2sk3920-01.pdf
isc N-Channel MOSFET Transistor 2SK3920-01FEATURESDrain Current : I = 67A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3921-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3921-01SJFEATURESDrain Current : I = 67A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk3927-01s.pdf
isc N-Channel MOSFET Transistor 2SK3927-01SFEATURESDrain Current : I = 34A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk3929-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3929-01MRFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 800m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk3926-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3926-01MRFEATURESDrain Current : I = 34A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk3924-01s.pdf
isc N-Channel MOSFET Transistor 2SK3924-01SFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk3927-01l.pdf
isc N-Channel MOSFET Transistor 2SK3927-01LFEATURESDrain Current : I = 34A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk3923-01.pdf
isc N-Channel MOSFET Transistor 2SK3923-01FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3921-01l.pdf
isc N-Channel MOSFET Transistor 2SK3921-01LFEATURESDrain Current : I = 67A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3924-01l.pdf
isc N-Channel MOSFET Transistor 2SK3924-01LFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk3927-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3927-01SJFEATURESDrain Current : I = 34A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk3928-01.pdf
isc N-Channel MOSFET Transistor 2SK3928-01FEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 800m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3921-01s.pdf
isc N-Channel MOSFET Transistor 2SK3921-01SFEATURESDrain Current : I = 67A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3924-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3924-01SJFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk3925-01.pdf
isc N-Channel MOSFET Transistor 2SK3925-01FEATURESDrain Current : I = 34A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 110m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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