All MOSFET. IRFBC20S Datasheet

 

IRFBC20S MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFBC20S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18(max) nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: TO263

 IRFBC20S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFBC20S Datasheet (PDF)

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Datasheet: IRFB9N30A , IRFB9N60A , IRFB9N65A , IRFBA1404 , IRFBA22N50A , IRFBA35N60C , IRFBC20 , IRFBC20L , STF13NM60N , IRFBC30 , IRFBC30A , IRFBC30AS , IRFBC30L , IRFBC30S , IRFBC32 , IRFBC40 , IRFBC40A .

 

 
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