All MOSFET. 2SK3725-01 Datasheet

 

2SK3725-01 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3725-01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.5 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220AB

 2SK3725-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3725-01 Datasheet (PDF)

 ..1. Size:110K  fuji
 2sk3725-01.pdf

2SK3725-01 2SK3725-01

2SK3725-01200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

 ..2. Size:288K  inchange semiconductor
 2sk3725-01.pdf

2SK3725-01 2SK3725-01

isc N-Channel MOSFET Transistor 2SK3725-01FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.1. Size:183K  toshiba
 2sk372.pdf

2SK3725-01 2SK3725-01

2SK372 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant Current Unit: mmand Impedance Converter Applications High breakdown voltage: VGDS = -40 V High input impedance: I = -1.0 nA (max) (V = -30 V) GSS GS Low R : R = 20 (typ.) (I = 15 mA) DS (ON) DS (ON) DSS Small package Maximum Rating

 8.2. Size:111K  fuji
 2sk3726-01mr.pdf

2SK3725-01 2SK3725-01

2SK3726-01MR200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

 8.3. Size:99K  fuji
 2sk3728-01mr.pdf

2SK3725-01 2SK3725-01

2SK3728-01MR200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]Features TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

 8.4. Size:98K  fuji
 2sk3727-01.pdf

2SK3725-01 2SK3725-01

2SK3727-01200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

 8.5. Size:43K  kexin
 2sk3723.pdf

2SK3725-01 2SK3725-01

SMD Type ICSMD Type TransistorsN-channel Enhancement Mode MOSFET2SK3723TO-263Unit: mm+0.24.57-0.21.27+0.1-0.1FeaturesLow on-resistance, low QgHigh avalanche resistance0.1maxFor high-speed switching1.27+0.1-0.1+0.10.81-0.12.541Gate2.54+0.2 +0.2-0.2 +0.15.08-0.1 0.4-0.22Drain3 SourceAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

 8.6. Size:288K  inchange semiconductor
 2sk3726-01mr.pdf

2SK3725-01 2SK3725-01

isc N-Channel MOSFET Transistor 2SK3726-01MRFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 8.7. Size:280K  inchange semiconductor
 2sk3728-01mr.pdf

2SK3725-01 2SK3725-01

isc N-Channel MOSFET Transistor 2SK3728-01MRFEATURESDrain Current : I = 2.2A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 8.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 8.8. Size:289K  inchange semiconductor
 2sk3727-01.pdf

2SK3725-01 2SK3725-01

isc N-Channel MOSFET Transistor 2SK3727-01FEATURESDrain Current : I = 2.2A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 8.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: STS3N95K3 | SSM3J16FU | SSM20P02GH | CS5N70F

 

 
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