All MOSFET. 2SK3769-01MR Datasheet

 

2SK3769-01MR MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3769-01MR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220F

 2SK3769-01MR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3769-01MR Datasheet (PDF)

 ..1. Size:98K  fuji
 2sk3769-01mr.pdf

2SK3769-01MR 2SK3769-01MR

2SK3769-01MRN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220FFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(Tc=25

 8.1. Size:89K  toshiba
 2sk3761.pdf

2SK3769-01MR 2SK3769-01MR

2SK3761 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS) 2SK3761 unit Switching Regulator Applications 4.7max4.7 max 10.5 max 10.5max 3.840.2 1.3 3.840.2 1.3 Low drain-source ON resistance: R = 0.9 (typ.) DS (ON) High forward transfer admittance: |Y | = 5.0S (typ.) fs Low leakage current: I = 100 A (V = 600 V)

 8.2. Size:274K  toshiba
 2sk3766.pdf

2SK3769-01MR 2SK3769-01MR

2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3766 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.9 (typ.) High forward transfer admittance: |Yfs| = 0.65 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement model: Vth = 3.5~4.5 V (VDS = 10 V, ID = 1 mA) Absolut

 8.3. Size:228K  toshiba
 2sk3767.pdf

2SK3769-01MR 2SK3769-01MR

2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3767 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings

 8.4. Size:279K  inchange semiconductor
 2sk3767.pdf

2SK3769-01MR 2SK3769-01MR

isc N-Channel MOSFET Transistor 2SK3767FEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSF6N80G | WMB090DNV6LG4 | NTMS5P02R2SG | SSF70N10A | STHV82FI | MDF5N50ZTH | MCH6604

 

 
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