2SK3769-01MR MOSFET Datasheet: N-Ch, 150V, 23A. Full specification with pinout and replacement list

2SK3769-01MR Specs and Replacement

Type Designator: 2SK3769-01MR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO220F

2SK3769-01MR substitution

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2SK3769-01MR datasheet

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2SK3769-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 ... See More ⇒

8.1. Size:89K toshiba
2sk3761.pdf pdf_icon

2SK3761 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK3761 unit Switching Regulator Applications 4.7max 4.7 max 10.5 max 10.5max 3.84 0.2 1.3 3.84 0.2 1.3 Low drain-source ON resistance R = 0.9 (typ.) DS (ON) High forward transfer admittance Y = 5.0S (typ.) fs Low leakage current I = 100 A (V = 600 V) ... See More ⇒

8.2. Size:274K toshiba
2sk3766.pdf pdf_icon

2SK3766 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3766 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.9 (typ.) High forward transfer admittance Yfs = 0.65 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement model Vth = 3.5 4.5 V (VDS = 10 V, ID = 1 mA) Absolut... See More ⇒

8.3. Size:228K toshiba
2sk3767.pdf pdf_icon

2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3767 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 3.3 (typ.) High forward transfer admittance Yfs = 1.6S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings... See More ⇒