All MOSFET. IRFBC30A Datasheet

 

IRFBC30A Datasheet and Replacement


   Type Designator: IRFBC30A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 23(max) nC
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO220AB
 

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IRFBC30A Datasheet (PDF)

 ..1. Size:193K  international rectifier
 irfbc30a.pdf pdf_icon

IRFBC30A

PD - 95700SMPS MOSFETIRFBC30APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 600V 2.2 3.6Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Avalanc

 ..2. Size:216K  vishay
 irfbc30apbf sihfbc30a.pdf pdf_icon

IRFBC30A

IRFBC30A, SiHFBC30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 2.2RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 23COMPLIANTRuggednessQgs (nC) 5.4 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigur

 ..3. Size:215K  vishay
 irfbc30a sihfbc30a.pdf pdf_icon

IRFBC30A

IRFBC30A, SiHFBC30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 2.2RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 23COMPLIANTRuggednessQgs (nC) 5.4 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigur

 ..4. Size:284K  inchange semiconductor
 irfbc30a.pdf pdf_icon

IRFBC30A

iscN-Channel MOSFET Transistor IRFBC30AFEATURESLow drain-source on-resistance:RDS(ON) =2.2 (MAX)Enhancement mode:Vth = 2 to 4.5V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

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Datasheet: IRFB9N65A , IRFBA1404 , IRFBA22N50A , IRFBA35N60C , IRFBC20 , IRFBC20L , IRFBC20S , IRFBC30 , 75N75 , IRFBC30AS , IRFBC30L , IRFBC30S , IRFBC32 , IRFBC40 , IRFBC40A , IRFBC40AS , IRFBC40L .

History: IRC150 | JCS540CT

Keywords - IRFBC30A MOSFET datasheet

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