All MOSFET. IRFBC30A Datasheet

 

IRFBC30A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFBC30A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23(max) nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO220AB

 IRFBC30A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFBC30A Datasheet (PDF)

 ..1. Size:193K  international rectifier
 irfbc30a.pdf

IRFBC30A IRFBC30A

PD - 95700SMPS MOSFETIRFBC30APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 600V 2.2 3.6Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Avalanc

 ..2. Size:216K  vishay
 irfbc30apbf sihfbc30a.pdf

IRFBC30A IRFBC30A

IRFBC30A, SiHFBC30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 2.2RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 23COMPLIANTRuggednessQgs (nC) 5.4 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigur

 ..3. Size:215K  vishay
 irfbc30a sihfbc30a.pdf

IRFBC30A IRFBC30A

IRFBC30A, SiHFBC30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 2.2RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 23COMPLIANTRuggednessQgs (nC) 5.4 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigur

 ..4. Size:284K  inchange semiconductor
 irfbc30a.pdf

IRFBC30A IRFBC30A

iscN-Channel MOSFET Transistor IRFBC30AFEATURESLow drain-source on-resistance:RDS(ON) =2.2 (MAX)Enhancement mode:Vth = 2 to 4.5V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 0.1. Size:302K  international rectifier
 irfbc30aspbf irfbc30alpbf.pdf

IRFBC30A IRFBC30A

PD- 95534SMPS MOSFETIRFBC30AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 600V 2.2 3.6Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalan

 0.2. Size:147K  international rectifier
 irfbc30as irfbc30al.pdf

IRFBC30A IRFBC30A

PD- 91890BSMPS MOSFETIRFBC30AS/LHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 600V 2.2 3.6A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre

 0.3. Size:261K  vishay
 irfbc30as sihfbc30as irfbc30al sihfbc30al.pdf

IRFBC30A IRFBC30A

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 23RequirementQgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterized Ca

 0.4. Size:235K  vishay
 irfbc30al irfbc30alpbf irfbc30aspbf.pdf

IRFBC30A IRFBC30A

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 23RequirementQgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterized Ca

Datasheet: IRFB9N65A , IRFBA1404 , IRFBA22N50A , IRFBA35N60C , IRFBC20 , IRFBC20L , IRFBC20S , IRFBC30 , IRFB31N20D , IRFBC30AS , IRFBC30L , IRFBC30S , IRFBC32 , IRFBC40 , IRFBC40A , IRFBC40AS , IRFBC40L .

 

 
Back to Top