2SK715U-AC MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2SK715U-AC
   Marking Code: K715
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm
   Package: TO92

2SK715U-AC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK715U-AC Datasheet (PDF)

6.1. Size:705K onsemi
2sk715u-v-w.pdf

2SK715N-Channel JFETwww.onsemi.com15V, 7.3 to 24mA, 50mSApplications AM Tuner RF Amp, Low-noise Amp HF Low-noise AmpFeaturesElectrical Connection Marking Adoption of FBET Process Large yfs 2 1 : Source K715 Small Ciss2 : GateLOT No. Very Low Noise Figure 3 : DrainSpecificationsAbsolute Maximum Ratings at Ta=25C 1 3Parameter Symbol

8.1. Size:90K sanyo
2sk715.pdf

Ordering number:EN2543N-Channel Junction Silicon FET2SK715AM Tuner, RF Amplifier ApplicationsApplications Package Dimensions AM tuner RF amp, low-noise amp.unit:mm HF low-noise amp.2034A[2SK715]2.24.0Features Adoption of FBET process. Large yfs .0.40.5 Small Ciss. Very low noise figure.0.40.41 2 31 : Source1.3 1.32 : Gate

9.1. Size:523K toshiba
2sk711.pdf

2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications Unit: mmAM High Frequency Amplifier Applications Audio Frequency Amplifier Applications High |Yfs|: |Yfs| = 25 mS (typ.) Low Ciss: Ciss = 7.5 pF (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitGate-drain voltage VGDS -2

9.2. Size:341K nec
2sk719.pdf

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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2SK715U-AC MOSFET. Datasheet pdf. Equivalent

2SK715U-AC Datasheet (PDF)

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