2SK715U-AC Specs and Replacement
Type Designator: 2SK715U-AC
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm
Package: TO92
2SK715U-AC substitution
- MOSFET ⓘ Cross-Reference Search
2SK715U-AC datasheet
2sk715u-v-w.pdf
2SK715 N-Channel JFET www.onsemi.com 15V, 7.3 to 24mA, 50mS Applications AM Tuner RF Amp, Low-noise Amp HF Low-noise Amp Features Electrical Connection Marking Adoption of FBET Process Large yfs 2 1 Source K715 Small Ciss 2 Gate LOT No. Very Low Noise Figure 3 Drain Specifications Absolute Maximum Ratings at Ta=25 C 1 3 Parameter Symbol ... See More ⇒
2sk715.pdf
Ordering number EN2543 N-Channel Junction Silicon FET 2SK715 AM Tuner, RF Amplifier Applications Applications Package Dimensions AM tuner RF amp, low-noise amp. unit mm HF low-noise amp. 2034A [2SK715] 2.2 4.0 Features Adoption of FBET process. Large yfs . 0.4 0.5 Small Ciss. Very low noise figure. 0.4 0.4 1 2 3 1 Source 1.3 1.3 2 Gate ... See More ⇒
2sk711.pdf
2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications Unit mm AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications High Yfs Yfs = 25 mS (typ.) Low Ciss Ciss = 7.5 pF (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS -2... See More ⇒
Detailed specifications: 2SK1172, 2SK1172-01, 2SK1199, 2SK1200, 2SK693, 2SK694, 2SK695, 2SK696, IRF540, 2SK715V-AC, 2SK719, 2SK723, 2SK726, 2SK685, 2SK1280, 2SK1321, 2SK1322
Keywords - 2SK715U-AC MOSFET specs
2SK715U-AC cross reference
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