All MOSFET. 2SK3557-7-TB-E Datasheet

 

2SK3557-7-TB-E Datasheet and Replacement


   Type Designator: 2SK3557-7-TB-E
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm
   Package: SOT23
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2SK3557-7-TB-E Datasheet (PDF)

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2SK3557-7-TB-E

2SK3557Ordering number : EN7169ASANYO SemiconductorsDATA SHEETN-Channel Junctin Silicon FETHigh-Frequency Low-Noise2SK3557Amplifier ApplicationsApplications AM tuner RF amplification Low noise amplifierFeatures Large yfs | | Small Ciss Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer Ultralow noise figureS

 7.1. Size:34K  sanyo
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2SK3557-7-TB-E

Ordering number : ENN71692SK3557N-Channel Junction Silicon FET2SK3557Low-Noise HF Amplifier ApplicationsPreliminaryApplications Package Dimensions AM tuner RF amplifier. unit : mm Low noise amplifier. 2050A[2SK3557]Features Large yfs.0.40.163 Small Ciss. Ultrasmall-sized package permitting 2SK3557-0 to 0.1applied sets to be made smaller a

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2SK3557-7-TB-E

Ordering number : EN7169A2SK3557N-Channel JFEThttp://onsemi.com15V, 10 to 32mA, 35mS, CPApplications AM tuner RF amplification Low noise amplifierFeatures Large yfs | | Small Ciss Ultrasmall-sized package permitting 2SK3557-applied sets to be made smaller and slimer Ultralow noise figureSpecificationsAbsolute Maximum Ratings at Ta=25CParamete

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History: 2SK3192 | FQD4N25TM

Keywords - 2SK3557-7-TB-E MOSFET datasheet

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 2SK3557-7-TB-E equivalent finder
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 2SK3557-7-TB-E replacement

 

 
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