2SK3652 Datasheet and Replacement
Type Designator: 2SK3652
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 230 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 850 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO263
2SK3652 substitution
2SK3652 Datasheet (PDF)
2sk3652.pdf

SMD Type ICSMD Type TransistorsN-channel Enhancement Mode MOSFET2SK3652TO-263Unit: mm+0.24.57-0.21.27+0.1-0.1FeaturesLow on-resistance, low QgHigh avalanche resistanceFor high-speed switching0.1max1.27+0.1-0.1+0.10.81-0.12.541Gate2.54+0.2 +0.2-0.2 +0.15.08-0.1 0.4-0.22Drain3 SourceAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
2sk3658.pdf

2SK3658 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK3658 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.23 (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement-mode : Vth = 0.8 to 2.0 V (VD
2sk365.pdf

2SK365 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current Unit: mmand Impedance Converter Applications High breakdown voltage: VGDS = -50 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low RDS (ON): RDS (ON) = 80 (typ.) (IDSS = 5 mA) Small package Absolute Maximum Rating
2sk3656.pdf

2SK3656 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3656 VHF- and UHF-band Amplifier Applications Unit: mm(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this
Datasheet: 2SK3541SGP , 2SK3541T2L , 2SK3541VGP , 2SK3546G0L , 2SK3546J , 2SK3547 , 2SK3557-6-TB-E , 2SK3557-7-TB-E , 12N60 , 2SK3659 , 2SK3666-2-TB-E , 2SK3666-3-TB-E , 2SK3943-ZP , 2SK3715 , 2SK3723 , 2SK3731 , 2SK3738 .
Keywords - 2SK3652 MOSFET datasheet
2SK3652 cross reference
2SK3652 equivalent finder
2SK3652 lookup
2SK3652 substitution
2SK3652 replacement



LIST
Last Update
MOSFET: APJ14N65T | APJ14N65P | APJ14N65F | APJ14N65D | APN9N50D | AP65R190 | APJ50N65T | APJ50N65P | APJ50N65F | APJ30N65T | APJ30N65P | APJ30N65F | AP65R650 | APG60N10S | APG120N04NF | AP8G06S
MDT7N65 | MDT70N03 | MDT60NF06D | MDT60N10D | MDT60N06D | MDT5N65 | MPG100N08P | MPG100N07S | MPG100N07P | MPG100N06S | MPG100N06P | MPF9N20 | MPF8N65 | MPF5N65 | MPF50N25 | MPF40N25 | MPF3N150 | MPF2N60 | MDT50N06D | MDT40N10D | MDT40N06D | MDT30N10D | MDT30N10 | MDT30N06L | MDT2N60 | MDT20P04D
Popular searches
2sd235 | k3502 datasheet | p0903bdg datasheet | 2sa722 | f1010e mosfet datasheet | 2sa566 | bc559 equivalent | c2075 transistor