2SK3723
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3723
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 55.4
nC
trⓘ - Rise Time: 46
nS
Cossⓘ -
Output Capacitance: 618
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042
Ohm
Package:
TO263
2SK3723
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3723
Datasheet (PDF)
..1. Size:43K kexin
2sk3723.pdf 
SMD Type ICSMD Type TransistorsN-channel Enhancement Mode MOSFET2SK3723TO-263Unit: mm+0.24.57-0.21.27+0.1-0.1FeaturesLow on-resistance, low QgHigh avalanche resistance0.1maxFor high-speed switching1.27+0.1-0.1+0.10.81-0.12.541Gate2.54+0.2 +0.2-0.2 +0.15.08-0.1 0.4-0.22Drain3 SourceAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
8.1. Size:183K toshiba
2sk372.pdf
2SK372 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant Current Unit: mmand Impedance Converter Applications High breakdown voltage: VGDS = -40 V High input impedance: I = -1.0 nA (max) (V = -30 V) GSS GS Low R : R = 20 (typ.) (I = 15 mA) DS (ON) DS (ON) DSS Small package Maximum Rating
8.2. Size:111K fuji
2sk3726-01mr.pdf
2SK3726-01MR200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
8.3. Size:110K fuji
2sk3725-01.pdf
2SK3725-01200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
8.4. Size:99K fuji
2sk3728-01mr.pdf
2SK3728-01MR200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]Features TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
8.5. Size:98K fuji
2sk3727-01.pdf
2SK3727-01200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
8.6. Size:288K inchange semiconductor
2sk3726-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3726-01MRFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
8.7. Size:288K inchange semiconductor
2sk3725-01.pdf
isc N-Channel MOSFET Transistor 2SK3725-01FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
8.8. Size:280K inchange semiconductor
2sk3728-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3728-01MRFEATURESDrain Current : I = 2.2A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 8.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
8.9. Size:289K inchange semiconductor
2sk3727-01.pdf
isc N-Channel MOSFET Transistor 2SK3727-01FEATURESDrain Current : I = 2.2A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 8.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
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