2SK2957L PDF and Equivalents Search

 

2SK2957L Specs and Replacement

Type Designator: 2SK2957L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 330 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO251

2SK2957L substitution

- MOSFET ⓘ Cross-Reference Search

 

2SK2957L datasheet

 ..1. Size:282K  inchange semiconductor
2sk2957l.pdf pdf_icon

2SK2957L

isc N-Channel MOSFET Transistor 2SK2957L FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

 0.1. Size:201K  renesas
2sk2957l-s.pdf pdf_icon

2SK2957L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 7.1. Size:84K  renesas
2sk2957.pdf pdf_icon

2SK2957L

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒

 7.2. Size:356K  inchange semiconductor
2sk2957s.pdf pdf_icon

2SK2957L

isc N-Channel MOSFET Transistor 2SK2957S FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

Detailed specifications: 2SK1805, 2SK3804-01S, 2SK1819-01MR, 2SK1943-01, 2SK1949L, 2SK1949S, 2SK1952, 2SK1975, AO3400A, 2SK2957S, 2SK2958L, 2SK2958S, 2SJ0536, 2SJ125, 2SJ128-Z, 2SJ132-Z, 2SJ133-Z

Keywords - 2SK2957L MOSFET specs

 2SK2957L cross reference

 2SK2957L equivalent finder

 2SK2957L pdf lookup

 2SK2957L substitution

 2SK2957L replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.