All MOSFET. 2SK2958S Datasheet

 

2SK2958S MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK2958S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 430 nS
   Cossⓘ - Output Capacitance: 2700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO252

 2SK2958S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2958S Datasheet (PDF)

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 2sk2958s.pdf

2SK2958S 2SK2958S

isc N-Channel MOSFET Transistor 2SK2958SFEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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 2sk2958stl.pdf

2SK2958S 2SK2958S

2SK2958(L), 2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1058-0400 (Previous: ADE-208-568B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 5.5 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L)) (Package name: LDPAK

 7.1. Size:100K  renesas
 2sk2958l-s.pdf

2SK2958S 2SK2958S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.2. Size:102K  renesas
 rej03g1058 2sk2958lsds.pdf

2SK2958S 2SK2958S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.3. Size:89K  renesas
 2sk2958.pdf

2SK2958S 2SK2958S

2SK2958(L), 2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1058-0400 (Previous: ADE-208-568B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 5.5 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L)) (Package name: LDPAK

 7.4. Size:282K  inchange semiconductor
 2sk2958l.pdf

2SK2958S 2SK2958S

isc N-Channel MOSFET Transistor 2SK2958LFEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SFB083N80CC2

 

 
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