All MOSFET. 2SJ128-Z Datasheet

 

2SJ128-Z MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ128-Z

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO252

2SJ128-Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ128-Z Datasheet (PDF)

1.1. 2sj128-z.pdf Size:2691K _upd

2SJ128-Z
2SJ128-Z

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.2. 2sj128-z.pdf Size:998K _nec

2SJ128-Z
2SJ128-Z

 4.1. 2sj128.pdf Size:283K _nec

2SJ128-Z
2SJ128-Z

Datasheet: 2SK1952 , 2SK1975 , 2SK2957L , 2SK2957S , 2SK2958L , 2SK2958S , 2SJ0536 , 2SJ125 , IRFP260M , 2SJ132-Z , 2SJ133-Z , 2SJ145 , 2SJ147 , 2SJ172 , 2SJ173 , 2SJ174 , 2SJ687 .

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