2SJ128-Z Datasheet and Replacement
Type Designator: 2SJ128-Z
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO252
2SJ128-Z substitution
2SJ128-Z Datasheet (PDF)
2sj128-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj125.pdf

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that troub
Datasheet: 2SK1952 , 2SK1975 , 2SK2957L , 2SK2957S , 2SK2958L , 2SK2958S , 2SJ0536 , 2SJ125 , STP65NF06 , 2SJ132-Z , 2SJ133-Z , 2SJ145 , 2SJ147 , 2SJ172 , 2SJ173 , 2SJ174 , 2SJ687 .
History: SI4423DY | BLP04N10-P | SM140R50CT1TL | AP60SL650AFI | NVMFS5C410N | HAT1130R | DHB16N06
Keywords - 2SJ128-Z MOSFET datasheet
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History: SI4423DY | BLP04N10-P | SM140R50CT1TL | AP60SL650AFI | NVMFS5C410N | HAT1130R | DHB16N06



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