2SJ172
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ172
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 65
nS
Cossⓘ -
Output Capacitance: 460
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18
Ohm
Package:
TO220AB
2SJ172
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ172
Datasheet (PDF)
..1. Size:42K hitachi
2sj172.pdf 
2SJ172Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-220AB1D231. Gate G2. Drain (Flange) 3. SourceS2
9.4. Size:119K hitachi
2sj169 2sj170.pdf
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9.5. Size:29K hitachi
2sj175.pdf
2SJ175Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ175Abso
9.7. Size:29K hitachi
2sj177.pdf
2SJ177Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ177Abso
9.9. Size:1334K kexin
2sj179.pdf
SMD Type MOSFETP-Channel MOSFET2SJ1791.70 0.1 Features VDS (V) =-30V ID =-1.5 A (VGS =-10V) RDS(ON) 1 (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 1.5 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 20 Continuous Drain Current ID
9.10. Size:1602K cn vbsemi
2sj179.pdf
2SJ179www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABSOL
9.11. Size:796K cn vbsemi
2sj177.pdf
2SJ177www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.050 at VGS = - 10 V- 30- 60 67 100 % Rg and UIS Tested0.060 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/ECTO-220 FULLPAK SGS DDGP-Channel MO
9.12. Size:193K inchange semiconductor
2sj170.pdf
INCHANGE Semiconductorisc P-Channel MOSFET Transistor 2SJ170DESCRIPTIONLow Drain-Source ON ResistanceHigh Forward Transfer AdmittanceLow Leakage CurrentEnhancement-ModeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive application
9.13. Size:193K inchange semiconductor
2sj171.pdf
INCHANGE Semiconductorisc P-Channel MOSFET Transistor 2SJ171DESCRIPTIONLow Drain-Source ON ResistanceHigh Forward Transfer AdmittanceLow Leakage CurrentEnhancement-ModeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive applicationA
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