All MOSFET. 2SJ652-1E Datasheet

 

2SJ652-1E MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SJ652-1E
   Marking Code: J652
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO220F

 2SJ652-1E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ652-1E Datasheet (PDF)

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Datasheet: 2SJ687 , 2SJ687-ZK , 2SJ690 , 2V7002K , 2V7002L , 2V7002W , 2SJ650 , 2SJ651 , IRFZ44N , 2SJ661-1E , 2SJ661-DL-1E , 2SJ661-DL-E , 2SJ673 , 2SJ683 , 2SJ176 , 2SJ177 , 2SJ182L .

 

 
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