All MOSFET. 2SJ673 Datasheet

 

2SJ673 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SJ673
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 87 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 820 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO220F

 2SJ673 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ673 Datasheet (PDF)

 ..1. Size:280K  renesas
 2sj673.pdf

2SJ673 2SJ673

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 ..2. Size:153K  nec
 2sj673.pdf

2SJ673 2SJ673

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ673SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ673 is P-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SJ673 Isolated TO-220 (MP-45F) FEATURES Super low on-state resistance (Isolated TO-220) RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -

 9.1. Size:144K  1
 2sj676.pdf

2SJ673 2SJ673

2SJ676 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOS V) 2SJ676 Switching Regulator, DC/DC Converter and Unit: mmMotor Drive Applications Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -200 V) Enhancement mode: Vth = -1.5 to -3.5 V

 9.2. Size:37K  sanyo
 2sj670.pdf

2SJ673 2SJ673

Ordering number : EN8354A 2SJ670SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ670ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --100 VGate-to-Source Voltage VGSS 20

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDS6690AS

 

 
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