2SJ214S Datasheet and Replacement
Type Designator: 2SJ214S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 460 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO263
2SJ214S substitution
2SJ214S Datasheet (PDF)
2sj218.pdf

2SJ218Silicon P-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutline2SJ218Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 60 V
2sj216.pdf

2SJ216Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device_ Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-3PFMDG1231. Gate 2. Drain 3. SourceS2SJ216Absolut
2sj217.pdf

2SJ217 Silicon P Channel MOS FET REJ03G0850-0200 (Previous: NON-084) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Pa
Datasheet: 2SJ683 , 2SJ176 , 2SJ177 , 2SJ182L , 2SJ182S , 2SJ183 , 2SJ210C , 2SJ214L , IRF640N , 2SJ215 , 2SJ220L , 2SJ220S , 2SJ606 , 2SJ606-S , 2SJ606-Z , 2SJ607 , 2SJ607-Z .
History: IRFP450APBF | BF1105R
Keywords - 2SJ214S MOSFET datasheet
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2SJ214S lookup
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History: IRFP450APBF | BF1105R



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