All MOSFET. 2SJ220L Datasheet

 

2SJ220L MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ220L

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 125 nS

Drain-Source Capacitance (Cd): 990 pF

Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm

Package: TO263

2SJ220L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ220L Datasheet (PDF)

1.1. 2sj220l-s.pdf Size:173K _upd

2SJ220L



5.1. 2sj226.pdf Size:84K _sanyo

2SJ220L
2SJ220L

Ordering number:EN3811 P-Channel Silicon MOSFET 2SJ226 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ226] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP S

5.2. 2sj227.pdf Size:85K _sanyo

2SJ220L
2SJ220L

Ordering number:EN3812 P-Channel Silicon MOSFET 2SJ227 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ227] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP S

 5.3. 2sj228.pdf Size:92K _sanyo

2SJ220L
2SJ220L

Ordering number:EN3813 P-Channel Silicon MOSFET 2SJ228 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SJ228] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Ratings

5.4. 2sj225.pdf Size:91K _sanyo

2SJ220L
2SJ220L

Ordering number:EN3810 P-Channel Silicon MOSFET 2SJ225 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SJ225] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Ratings

 5.5. 2sj229.pdf Size:86K _sanyo

2SJ220L
2SJ220L

Ordering number:EN3814 P-Channel Silicon MOSFET 2SJ229 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ229] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP S

5.6. 2sj221.pdf Size:81K _renesas

2SJ220L
2SJ220L

2SJ221 Silicon P Channel MOS FET REJ03G0851-0200 (Previous: ADE-208-1185) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device ? Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code

5.7. rej03g0851 2sj221ds.pdf Size:94K _renesas

2SJ220L
2SJ220L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.8. 2sj222.pdf Size:82K _renesas

2SJ220L
2SJ220L

2SJ222 Silicon P Channel MOS FET REJ03G0852-0200 (Previous: ADE-208-1186) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device ? Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code

5.9. rej03g0852 2sj222ds.pdf Size:95K _renesas

2SJ220L
2SJ220L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

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