2SJ607-Z PDF and Equivalents Search

SMD Type MOSFET P-Channel MOSFET 2SJ607-ZJ Features VDS (V) =-60V ID =-83A RDS(ON) 11m (VGS =-10V) RDS(ON) 16m (VGS =-4V) Low Ciss Ciss = 7500 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20 ... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ607 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ607 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for high current switching applications. 2SJ607 TO-220AB 2SJ607-S TO-262 FEATURES 2SJ607-ZJ TO-263 Super low on-state resistance Note RDS(on)1 = 11 m MAX. (VGS = -10 V, ID = -42 A... See More ⇒