2SJ625
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ625
Marking Code: XM
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.45
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.6
nC
trⓘ - Rise Time: 190
nS
Cossⓘ -
Output Capacitance: 88
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.113
Ohm
Package: SC96
2SJ625
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ625
Datasheet (PDF)
..1. Size:193K nec
2sj625.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.1. Size:345K toshiba
2sj620.pdf
2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ620 Switching Regulator and DC-DC Converter Applications Unit: mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance: R = 63 m (typ.) DS (ON) High forward transfer admittance: |Y | = 15 S (typ.) fs Low leakage current: I = -100 A (max) (V = -100 V) DS
9.2. Size:30K sanyo
2sj628.pdf
Ordering number : ENN72712SJ628P-Channel Silicon MOSFET2SJ628Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 1.8V drive.[2SJ628]4.51.51.60.4 0.53 2 10.41.53.0(Bottom view)1 : Gate0.75 2 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum Ra
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