2SJ625 MOSFET Datasheet: P-Ch, 20V, 3A. Full specification with pinout and replacement list

2SJ625 Specs and Replacement

Type Designator: 2SJ625

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 88 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.113 Ohm

Package: SC96

2SJ625 substitution

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2SJ625 datasheet

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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2sj620.pdf pdf_icon

2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ620 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance R = 63 m (typ.) DS (ON) High forward transfer admittance Y = 15 S (typ.) fs Low leakage current I = -100 A (max) (V = -100 V) DS... See More ⇒

9.2. Size:30K sanyo
2sj628.pdf pdf_icon

Ordering number ENN7271 2SJ628 P-Channel Silicon MOSFET 2SJ628 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 1.8V drive. [2SJ628] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 Gate 0.75 2 Drain 3 Source Specifications SANYO PCP Absolute Maximum Ra... See More ⇒

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