2SJ603-Z MOSFET Datasheet: P-Ch, 60V, 25A. Full specification with pinout and replacement list

2SJ603-Z Specs and Replacement

Type Designator: 2SJ603-Z

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: TO263

2SJ603-Z substitution

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2SJ603-Z datasheet

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SMD Type MOSFET P-Channel MOSFET 2SJ603-ZJ Features VDS (V) =-60V ID =-25A RDS(ON) 48m (VGS =-10V) RDS(ON) 75m (VGS =-4V) Low Ciss Ciss = 1900 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20 ... See More ⇒

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ603 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ603 TO-220AB 2SJ603-S TO-262 FEATURES 2SJ603-ZJ TO-263 Super low on-state resistance Note RDS(on)1 = 48 m MAX. (VGS = -10 V, ID = -13 A) 2... See More ⇒

Detailed specifications: 2SJ649, 2SJ600, 2SJ601-Z, 2SJ602, 2SJ602-S, 2SJ602-Z, 2SJ603, 2SJ603-S, IRLB4132, 2SJ604, 2SJ604-S, 2SJ604-Z, 2SJ605, 2SJ605-S, 2SJ605-Z, 2SJ245L, 2SJ245S