2SJ604-Z Specs and Replacement
Type Designator: 2SJ604-Z
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 580 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO263
2SJ604-Z substitution
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2SJ604-Z datasheet
2sj604-zj.pdf
SMD Type MOSFET P-Channel MOSFET 2SJ604-ZJ Features VDS (V) =-60V ID =-45A RDS(ON) 30m (VGS =-10V ) RDS(ON) 43m (VGS =-4V) Low Ciss Ciss = 3300 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20... See More ⇒
2sj604-s-z-zj.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sj604.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ604 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ604 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ604 TO-220AB 2SJ604-S TO-262 FEATURES 2SJ604-ZJ TO-263 Super low on-state resistance Note RDS(on)1 = 30 m MAX. (VGS = -10 V, ID = -23 A) 2S... See More ⇒
Detailed specifications: 2SJ602, 2SJ602-S, 2SJ602-Z, 2SJ603, 2SJ603-S, 2SJ603-Z, 2SJ604, 2SJ604-S, IRFP260, 2SJ605, 2SJ605-S, 2SJ605-Z, 2SJ245L, 2SJ245S, 2SJ246L, 2SJ246S, 2SJ279L
Keywords - 2SJ604-Z MOSFET specs
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