2SJ246L MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ246L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 55 nS
Drain-Source Capacitance (Cd): 465 pF
Maximum Drain-Source On-State Resistance (Rds): 0.17 Ohm
Package: TO251
2SJ246L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ246L Datasheet (PDF)
2sj246l-s.pdf
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2SJ246 L , 2SJ246 SSILICON P-CHANNEL MOS FETApplicationDPAK1High speed power switching 44Features123123 Low onresistance High speed switching2, 4 Low drive current 4V gate drive device can be driven from15V source.1. Gate Suitable for Switching regulator, DC DC 2. Drain3. Sourceconverter34. DrainTable 1 Absolute Maximu
2sj243.pdf
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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ243P-CHANNEL MOS FETFOR SWITCHINGThe 2SJ243 is a P-channel vertical type MOS FET that is drivenPACKAGE DIMENSIONS (in mm)at 2.5 V.0.3 0.05Because this MOS FET can be driven on a low voltage and0.1+0.10.05because it is not necessary to consider the drive current, the2SJ243 is ideal for driving the actuator of power-saving sy
2sj240.pdf
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2sj248.pdf
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2SJ248 Silicon P Channel MOS FET REJ03G0855-0200 (Previous: ADE-208-1189) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A
2sj247.pdf
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2SJ247 Silicon P Channel MOS FET REJ03G0854-0200 (Previous: ADE-208-1188) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004AC-A
2sj244.pdf
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2SJ244 Silicon P Channel MOS FET REJ03G0853-0200 (Previous: ADE-208-1187) Rev.2.00 Sep 07, 2005 Description High speed power switching Low voltage operation Features Very Low on-resistance High speed switching Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline RENESAS Package code: PLZZ0004CA-AR(Package name:
rej03g0854 2sj247ds.pdf
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0855 2sj248ds.pdf
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj245l-s.pdf
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2SJ245 L , 2SJ245 SSILICON P-CHANNEL MOS FETApplicationDPAK14High speed power switching4Features123123 Low onresistance High speed switching2, 4 Low drive current 4 V Gate drive device can be driven1from 5 V source1. Gate Suitable for Switching regulator, DC DC 2. Drainconverter3. Source34. DrainTable 1 Absolute M
2sj245.pdf
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www.DataSheet4U.com2SJ245 L , 2SJ245 SSILICON P-CHANNEL MOS FETApplicationDPAK14High speed power switching4Features123123 Low onresistance High speed switching2, 4 Low drive current 4 V Gate drive device can be driven1from 5 V source1. Gate Suitable for Switching regulator, DC DC 2. Drainconverter3. Source34. Drai
2sj244.pdf
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SMD Type MOSFETP-Channel MOSFET2SJ2441.70 0.1 Features VDS (V) =-12VD ID =-2 A0.42 0.10.46 0.1 RDS(ON) 0.8 (VGS =-4V)G RDS(ON) 0.9 (VGS =-2.5V)1.Gate2.Drain3.SourceS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -12V Gate-Source Voltage VGS 7 Continuous Drain Current ID -2
2sj244.pdf
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2SJ244www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABSOL
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .