IRFBG20 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFBG20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 38(max) nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 52 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
Package: TO220AB
IRFBG20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFBG20 Datasheet (PDF)
irfbg20pbf.pdf
PD- 95271IRFBG20PbF Lead-Free05/20/04Document Number: 91123 www.vishay.com1IRFBG20PbFDocument Number: 91123 www.vishay.com2IRFBG20PbFDocument Number: 91123 www.vishay.com3IRFBG20PbFDocument Number: 91123 www.vishay.com4IRFBG20PbFDocument Number: 91123 www.vishay.com5IRFBG20PbFDocument Number: 91123 www.vishay.com6IRFBG20PbFDocument Number: 9
irfbg20pbf sihfbg20.pdf
IRFBG20, SiHFBG20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 11RoHS* Fast SwitchingQg (Max.) (nC) 38 COMPLIANT Ease of ParallelingQgs (nC) 4.9 Simple Drive RequirementsQgd (nC) 22 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD
irfbg20 sihfbg20.pdf
IRFBG20, SiHFBG20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 11RoHS* Fast SwitchingQg (Max.) (nC) 38 COMPLIANT Ease of ParallelingQgs (nC) 4.9 Simple Drive RequirementsQgd (nC) 22 Compliant to RoHS Directive 2002/95/ECConfiguration SingleD
irfbg20.pdf
iscN-Channel MOSFET Transistor IRFBG20FEATURESLow drain-source on-resistance:RDS(ON) = 11 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
irfbg30pbf.pdf
PD - 94989IRFBG30PbF Lead-Free2/9/04Document Number: 91124 www.vishay.com1IRFBG30PbFDocument Number: 91124 www.vishay.com2IRFBG30PbFDocument Number: 91124 www.vishay.com3IRFBG30PbFDocument Number: 91124 www.vishay.com4IRFBG30PbFDocument Number: 91124 www.vishay.com5IRFBG30PbFDocument Number: 91124 www.vishay.com6IRFBG30PbFTO-220AB Package Out
irfbg30pbf sihfbg30.pdf
IRFBG30, SiHFBG30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 5.0RoHS* Fast SwitchingQg (Max.) (nC) 80COMPLIANT Ease of ParallelingQgs (nC) 10Qgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irfbg30 sihfbg30.pdf
IRFBG30, SiHFBG30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 5.0RoHS* Fast SwitchingQg (Max.) (nC) 80COMPLIANT Ease of ParallelingQgs (nC) 10Qgd (nC) 42 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
irfbg30.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFBG30FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: IRFBC40S , IRFBC42 , IRFBE20 , IRFBE30 , IRFBF20 , IRFBF20L , IRFBF20S , IRFBF30 , SKD502T , IRFBG30 , IRFBL10N60A , IRFBL12N50A , IRFD014 , IRFD024 , IRFD110 , IRFD120 , IRFD210 .
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