IRFBG20 Specs and Replacement
Type Designator: IRFBG20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 52 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
Package: TO220AB
IRFBG20 substitution
- MOSFET ⓘ Cross-Reference Search
IRFBG20 datasheet
irfbg20pbf.pdf
PD- 95271 IRFBG20PbF Lead-Free 05/20/04 Document Number 91123 www.vishay.com 1 IRFBG20PbF Document Number 91123 www.vishay.com 2 IRFBG20PbF Document Number 91123 www.vishay.com 3 IRFBG20PbF Document Number 91123 www.vishay.com 4 IRFBG20PbF Document Number 91123 www.vishay.com 5 IRFBG20PbF Document Number 91123 www.vishay.com 6 IRFBG20PbF Document Number 9... See More ⇒
irfbg20pbf sihfbg20.pdf
IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 11 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.9 Simple Drive Requirements Qgd (nC) 22 Compliant to RoHS Directive 2002/95/EC Configuration Single D ... See More ⇒
irfbg20 sihfbg20.pdf
IRFBG20, SiHFBG20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 11 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 4.9 Simple Drive Requirements Qgd (nC) 22 Compliant to RoHS Directive 2002/95/EC Configuration Single D ... See More ⇒
Detailed specifications: IRFBC40S , IRFBC42 , IRFBE20 , IRFBE30 , IRFBF20 , IRFBF20L , IRFBF20S , IRFBF30 , IRF830 , IRFBG30 , IRFBL10N60A , IRFBL12N50A , IRFD014 , IRFD024 , IRFD110 , IRFD120 , IRFD210 .
Keywords - IRFBG20 MOSFET specs
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