2SJ293 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ293
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 15 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 95 nS
Drain-Source Capacitance (Cd): 670 pF
Maximum Drain-Source On-State Resistance (Rds): 0.095 Ohm
Package: TO220FM
2SJ293 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ293 Datasheet (PDF)
1.1. 2sj293.pdf 
Size:30K _hitachi
2SJ293 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ293 Absolute Ma
5.1. 2sj296l-s.pdf Size:50K _upd
www.DataSheet4U.com 2SJ296(L), 2SJ296(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate
5.2. 2sj297l-s.pdf Size:23K _upd
2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Sourc
5.3. 2sj292.pdf Size:22K _hitachi
2SJ292 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2SJ292
5.4. 2sj294.pdf Size:25K _hitachi
2SJ294 Silicon P Channel MOS FET Application TO–220FM High speed power switching Features • Low on–resistance • High speed switching 2 • Low drive current 1 2 3 • 4 V gate drive device can be driven from 1 5 V source • Suitable for Switching regulator, DC – DC 1. Gate converter 2. Drain • Avalanche Ratings 3. Source 3 Table 1 Absolute Maximum Ratings (T
5.5. 2sj295.pdf Size:31K _hitachi
2SJ295 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ295 Absolute Ma
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