2SJ293 MOSFET Datasheet: P-Ch, 60V, 15A. Full specification with pinout and replacement list

2SJ293 Specs and Replacement

   Type Designator: 2SJ293
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO220FM

2SJ293 substitution

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2SJ293 datasheet

..1. Size:30K hitachi
2sj293.pdf pdf_icon

2SJ293 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ293 Absolute Ma... See More ⇒

9.1. Size:22K hitachi
2sj292.pdf pdf_icon

2SJ292 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2SJ292 ... See More ⇒

9.2. Size:25K hitachi
2sj294.pdf pdf_icon

2SJ294 Silicon P Channel MOS FET Application TO 220FM High speed power switching Features Low on resistance High speed switching 2 Low drive current 1 2 3 4 V gate drive device can be driven from 1 5 V source Suitable for Switching regulator, DC DC 1. Gate converter 2. Drain Avalanche Ratings 3. Source 3 Table 1 Absolute Maximum Ratings (T... See More ⇒

9.3. Size:50K hitachi
2sj296l-s.pdf pdf_icon

www.DataSheet4U.com 2SJ296(L), 2SJ296(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate ... See More ⇒