2SJ296L Datasheet and Replacement. Cross Reference Search

2SJ296L Datasheet (PDF)

0.1. Size:50K hitachi
2sj296l-s.pdf pdf_icon

www.DataSheet4U.com2SJ296(L), 2SJ296(S)Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineLDPAK44123123DG1. Gate

9.1. Size:22K hitachi
2sj292.pdf pdf_icon

2SJ292Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220AB1D231. Gate G2. Drain (Flange) 3. SourceS2SJ292

9.2. Size:25K hitachi
2sj294.pdf pdf_icon

2SJ294Silicon P Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low onresistance High speed switching2 Low drive current123 4 V gate drive device can be driven from15 V source Suitable for Switching regulator, DC DC 1. Gateconverter2. Drain Avalanche Ratings3. Source3Table 1 Absolute Maximum Ratings (T

9.3. Size:30K hitachi
2sj293.pdf pdf_icon

2SJ293Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ293Absolute Ma