2SJ326-Z MOSFET Datasheet: P-Ch, 60V, 2A. Full specification with pinout and replacement list

2SJ326-Z Specs and Replacement

Type Designator: 2SJ326-Z

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm

Package: TO252

2SJ326-Z substitution

- MOSFET ⓘ Cross-Reference Search

2SJ326-Z datasheet

..1. Size:384K nec
2sj326-z.pdf pdf_icon

... See More ⇒

8.1. Size:386K nec
2sj326.pdf pdf_icon

... See More ⇒

9.1. Size:94K sanyo
2sj320.pdf pdf_icon

Ordering number EN4615A P-Channel Silicon MOSFET 2SJ320 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ320] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO... See More ⇒

9.2. Size:1872K renesas
2sj324-z.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒