2SJ327-Z MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ327-Z

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 410 pF

Maximum Drain-Source On-State Resistance (Rds): 0.17 Ohm

Package: TO252

2SJ327-Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ327-Z Datasheet (PDF)

1.1. 2sj327-z.pdf Size:342K _upd

4.1. 2sj327.pdf Size:346K _nec

5.1. 2sj324-z.pdf Size:1872K _upd

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.2. 2sj328-z.pdf Size:341K _upd

5.3. 2sj325-z.pdf Size:384K _upd

5.4. 2sj326-z.pdf Size:384K _upd

5.5. 2sj320.pdf Size:94K _sanyo

Ordering number:EN4615A P-Channel Silicon MOSFET 2SJ320 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2063A � Low-voltage drive. [2SJ320] � Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

5.6. 2sj324.pdf Size:344K _nec