All MOSFET. 2SJ358C Datasheet


2SJ358C MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ358C

Marking Code: XT1

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 0.143 Ohm

Package: SC84

2SJ358C Transistor Equivalent Substitute - MOSFET Cross-Reference Search


2SJ358C Datasheet (PDF)

1.1. 2sj358c.pdf Size:203K _upd


 Preliminary Data Sheet 2SJ358C R07DS1262EJ0300 Rev.3.00 P-CHANNEL MOSFET FOR SWITCHING Aug 17, 2015 Description The 2SJ358C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features  Directly driven by a 4.0 V power source.  Low on-state resistance RDS(on)1 = 143 m  MAX. (VGS = -1

4.1. 2sj358.pdf Size:193K _upd


To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sj358.pdf Size:96K _nec


DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings (unit: mm) The 2SJ358 is a P-channel vertical MOS FET that can 5.7 0.1 be used as a switching element. The 2SJ358 can be 1.5 0.1 2.0 0.2 directly driven by an IC operating at 5 V. The 2SJ358 features a low on-resistance and excellent switching characteristics, and is suitable for a

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