AOB2146L Datasheet and Replacement
Type Designator: AOB2146L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 119 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 105 A
tr ⓘ - Rise Time: 18.5 nS
Cossⓘ - Output Capacitance: 630 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: TO-263
AOB2146L substitution
AOB2146L Datasheet (PDF)
aob2146l.pdf

AOT2146L/AOB2146LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aob2146l.pdf

isc N-Channel MOSFET Transistor AOB2146LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
aot2144l aob2144l.pdf

AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)
aob2140l.pdf

AOT2140L/AOB2140LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AO4630 , AO4840E , AO4862E , AO6411 , AO6602G , AO6608 , AOB12N65L , AOB2140L , IRLZ44N , AOB2502L , AOB2904 , AOB2906 , AOB9N70L , AOC2804B , AOC2870 , AOC2874 , AOC3860 .
History: AON2401 | SUM90N03-2M2P
Keywords - AOB2146L MOSFET datasheet
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History: AON2401 | SUM90N03-2M2P



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