AOB2904 PDF and Equivalents Search

 ..1. Size:362K  aosemi
 aob2904.pdf

AOT2904/AOB2904 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 ..2. Size:238K  inchange semiconductor
 aob2904.pdf

isc N-Channel MOSFET Transistor AOB2904 FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen... See More ⇒

 8.1. Size:341K  aosemi
 aob290l.pdf

AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Power RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:341K  aosemi
 aot290l aob290l.pdf

AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Power RDS(ON) (at VGS=10V) ... See More ⇒

 8.3. Size:372K  aosemi
 aob2906.pdf

AOT2906/AOB2906 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 122A Low RDS(ON) Low Gate Charger RDS(ON) (at VGS=10V) ... See More ⇒

 8.4. Size:204K  inchange semiconductor
 aob290l.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOB290L FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM ... See More ⇒

 8.5. Size:238K  inchange semiconductor
 aob2906.pdf

isc N-Channel MOSFET Transistor AOB2906 FEATURES Drain Current I = 122A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 5.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen... See More ⇒