AOB2904 Datasheet and Replacement
Type Designator: AOB2904
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 326 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 605 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
Package: TO-263
AOB2904 substitution
AOB2904 Datasheet (PDF)
aob2904.pdf

AOT2904/AOB2904TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aob2904.pdf

isc N-Channel MOSFET Transistor AOB2904FEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
aob290l.pdf

AOT290L/AOB290L100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOT290L/AOB290L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Power RDS(ON) (at VGS=10V)
aot290l aob290l.pdf

AOT290L/AOB290L100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOT290L/AOB290L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Power RDS(ON) (at VGS=10V)
Datasheet: AO4862E , AO6411 , AO6602G , AO6608 , AOB12N65L , AOB2140L , AOB2146L , AOB2502L , 12N60 , AOB2906 , AOB9N70L , AOC2804B , AOC2870 , AOC2874 , AOC3860 , AOC3862 , AOC3864 .
History: 40P03
Keywords - AOB2904 MOSFET datasheet
AOB2904 cross reference
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AOB2904 substitution
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History: 40P03



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