AOC2804B Datasheet and Replacement
Type Designator: AOC2804B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id| ⓘ - Maximum Drain Current: 6 A
Qg ⓘ - Total Gate Charge: 9.5 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: ALPHADFN1.5X1.5
AOC2804B substitution
AOC2804B Datasheet (PDF)
aoc2804b.pdf
AOC2804B20V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)
aoc2804.pdf
AOC280420V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) IS (at VGS=4.5V) 4A With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc2800.pdf
AOC2800Common-Drain Dual N-Channel Enhancement Mode FieldEffect TransistorGeneral Description Product SummaryVss 30VThe AOC2800 uses advanced trench technology to provide ID (at VGS=4.5V) 6Aexcellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V)
aoc2802.pdf
AOC2802Common-Drain Dual N-Channel Enhancement Mode FieldEffect TransistorGeneral Description Product SummaryVss 20VThe AOC2802 uses advanced trench technology to provide ID (at VGS=4.5V) 6Aexcellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V)
Datasheet: AO6608 , AOB12N65L , AOB2140L , AOB2146L , AOB2502L , AOB2904 , AOB2906 , AOB9N70L , IRF4905 , AOC2870 , AOC2874 , AOC3860 , AOC3862 , AOC3864 , AOC3868 , AOC3870 , AOD409G .
History: BSC046N10NS3G
Keywords - AOC2804B MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: BSC046N10NS3G
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