AOC2870
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOC2870
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3
V
|Id|ⓘ - Maximum Drain Current: 10
A
Qgⓘ - Total Gate Charge: 11.5
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0119
Ohm
Package: ALPHADFN1.7X1.7
AOC2870
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOC2870
Datasheet (PDF)
..1. Size:363K aosemi
aoc2870.pdf 
AOC287020V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)
8.1. Size:365K aosemi
aoc2874.pdf
AOC287420V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
9.1. Size:244K aosemi
aoc2800.pdf
AOC2800Common-Drain Dual N-Channel Enhancement Mode FieldEffect TransistorGeneral Description Product SummaryVss 30VThe AOC2800 uses advanced trench technology to provide ID (at VGS=4.5V) 6Aexcellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V)
9.2. Size:363K aosemi
aoc2804.pdf
AOC280420V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) IS (at VGS=4.5V) 4A With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
9.3. Size:353K aosemi
aoc2804b.pdf
AOC2804B20V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)
9.4. Size:240K aosemi
aoc2802.pdf
AOC2802Common-Drain Dual N-Channel Enhancement Mode FieldEffect TransistorGeneral Description Product SummaryVss 20VThe AOC2802 uses advanced trench technology to provide ID (at VGS=4.5V) 6Aexcellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V)
9.5. Size:359K aosemi
aoc2806.pdf
AOC280620V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) IS (at VGS=4.5V) 4.5A With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
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