AOC2870 MOSFET Datasheet: N-Ch, 20V, 10A. Full specification with pinout and replacement list

AOC2870 Specs and Replacement

Type Designator: AOC2870

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0119 Ohm

Package: ALPHADFN1.7X1.7

AOC2870 substitution

- MOSFET ⓘ Cross-Reference Search

AOC2870 datasheet

..1. Size:363K aosemi
aoc2870.pdf pdf_icon

AOC2870 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary VSS Trench Power AlphaMOS ( MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V) ... See More ⇒

8.1. Size:365K aosemi
aoc2874.pdf pdf_icon

AOC2874 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

9.1. Size:244K aosemi
aoc2800.pdf pdf_icon

AOC2800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary Vss 30V The AOC2800 uses advanced trench technology to provide ID (at VGS=4.5V) 6A excellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V) ... See More ⇒

9.2. Size:363K aosemi
aoc2804.pdf pdf_icon

AOC2804 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary VSS Trench Power AlphaMOS ( MOS LV) technology 20V Low RSS(ON) IS (at VGS=4.5V) 4A With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒