IRFD214 Datasheet. Specs and Replacement
Type Designator: IRFD214 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 8.2 max nC
tr ⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 42 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: HD-1
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IRFD214 substitution
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IRFD214 datasheet
irfd214.pdf
PD -9.1271 IRFD214 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 250V For Automatic Insertion End Stackable RDS(on) = 2.0 Fast Switching Ease of paralleling Simple Drive Requirements ID = 0.45A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device desi... See More ⇒
irfd214 sihfd214.pdf
IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen... See More ⇒
irfd214pbf sihfd214.pdf
IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 2.0 For Automatic Insertion RoHS* Qg (Max.) (nC) 8.2 COMPLIANT End Stackable Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Ease of Paralleling Configuration Single Simple Drive Requiremen... See More ⇒
Detailed specifications: IRFBG30, IRFBL10N60A, IRFBL12N50A, IRFD014, IRFD024, IRFD110, IRFD120, IRFD210, AOD4184A, IRFD220, IRFD224, IRFD310, IRFD320, IRFD420, IRFD9014, IRFD9024, IRFD9110
Keywords - IRFD214 MOSFET specs
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