IRFD214 Datasheet and Replacement
Type Designator: IRFD214
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 42 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: HD-1
IRFD214 substitution
IRFD214 Datasheet (PDF)
irfd214.pdf
PD -9.1271IRFD214HEXFET Power MOSFETDynamic dv/dt RatingRepetitive Avalanche RatedVDSS = 250VFor Automatic InsertionEnd StackableRDS(on) = 2.0Fast SwitchingEase of parallelingSimple Drive RequirementsID = 0.45ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast switching, ruggedized device desi
irfd214 sihfd214.pdf
IRFD214, SiHFD214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 2.0 For Automatic InsertionRoHS*Qg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
irfd214pbf sihfd214.pdf
IRFD214, SiHFD214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 2.0 For Automatic InsertionRoHS*Qg (Max.) (nC) 8.2COMPLIANT End StackableQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Ease of ParallelingConfiguration Single Simple Drive Requiremen
Datasheet: IRFBG30 , IRFBL10N60A , IRFBL12N50A , IRFD014 , IRFD024 , IRFD110 , IRFD120 , IRFD210 , AO4468 , IRFD220 , IRFD224 , IRFD310 , IRFD320 , IRFD420 , IRFD9014 , IRFD9024 , IRFD9110 .
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