AOL1404G
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOL1404G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25
V
|Id|ⓘ - Maximum Drain Current: 46
A
trⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 485
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046
Ohm
Package:
ULTRASO8
AOL1404G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOL1404G
Datasheet (PDF)
..1. Size:352K aosemi
aol1404g.pdf
AOL1404G20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 46A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)
7.1. Size:231K aosemi
aol1404.pdf
AOL140420V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1404 combines advanced trench MOSFET 20Vtechnology with a low resistance package to provide ID (at VGS=4.5V)45Aextremely low RDS(ON). This device is ideal for load switch
8.1. Size:144K aosemi
aol1401.pdf
AOL1401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38Vcharge with a 25V gate rating. This device is suitable ID = -85Afor use as a load switch or in PWM applications. It is RDS(ON)
8.2. Size:208K aosemi
aol1408.pdf
AOL1408N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1408 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V)body diode characteristics. This device is ideally suited RDS(ON)
Datasheet: IRFP360LC
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