All MOSFET. AON5816 Datasheet

 

AON5816 MOSFET. Datasheet pdf. Equivalent

Type Designator: AON5816

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.7 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.3 V

Maximum Drain Current |Id|: 12 A

Rise Time (tr): 23 nS

Drain-Source Capacitance (Cd): 330 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm

Package: DFN2x5

AON5816 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON5816 Datasheet (PDF)

1.1. aon5816.pdf Size:401K _aosemi

AON5816
AON5816

AON5816 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V • Low RDS(ON) • With ESD Protection to improve battery performance and safety ID (at VGS=4.5V) 12A • Common drain configuration for design simplicity RDS(ON) (at VGS=4.5V) < 6.5mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=3.7V) < 7mΩ RDS(ON) (at VGS=3.1V) < 7.8mΩ

4.1. aon5810.pdf Size:399K _aosemi

AON5816
AON5816

AON5810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5810 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 7.7 A (VGS = 4.5V) operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This RDS(ON) < 18 mΩ (VGS = 4.5V) device is

 5.1. aon5800.pdf Size:127K _aosemi

AON5816
AON5816

AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5800 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 8 A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON) < 16 mΩ (VGS = 10V) retaining a 12V VGS(MAX) rating. It is ESD protected. RDS(ON) < 20 m

5.2. aon5820.pdf Size:272K _aosemi

AON5816
AON5816

AON5820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V The AON5820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 10A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V) < 9.5mΩ VGS(MAX) rating It is ESD protected. This device is suitable RDS(ON) (at VGS=4.

 5.3. aon5802a.pdf Size:117K _aosemi

AON5816
AON5816

AON5802A, AON5802AL Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802A uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V) voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for u

5.4. aon5802b.pdf Size:269K _aosemi

AON5816
AON5816

AON5802B 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS The AON5802B uses advanced trench technology to 30V provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 7.2A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V) < 19mΩ VGS(MAX) rating. It is ESD protected. This device is suitable RDS(ON) (at VGS=

Datasheet: AOI66406 , AOK60N30L , AOL1404G , AOL1454G , AON2392 , AON3414 , AON3820 , AON5802BG , 2SK2611 , AON6144 , AON6152 , AON6154 , AON6156 , AON6160 , AON6162 , AON6224 , AON6220 .

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