AON6224A
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6224A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 56.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 34
A
trⓘ - Rise Time: 29.5
nS
Cossⓘ -
Output Capacitance: 180
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0116
Ohm
Package:
DFN5X6
AON6224A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6224A
Datasheet (PDF)
..1. Size:295K aosemi
aon6224a.pdf 
AON6224ATM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Logicl Level Driving RDS(ON) (at VGS=10V)
7.1. Size:221K aosemi
aon6224.pdf
AON6224100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 34A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. Size:324K aosemi
aon6220.pdf
AON6220TM100V Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)
8.2. Size:330K aosemi
aon6226.pdf
AON6226TM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
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