AON7264E
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON7264E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 27.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 28
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 300
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095
Ohm
Package:
DFN3X3EP
AON7264E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON7264E
Datasheet (PDF)
..1. Size:348K 1
aon7264e.pdf
AON7264ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 28A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
..2. Size:348K aosemi
aon7264e.pdf
AON7264ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 28A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
7.1. Size:563K aosemi
aon7264c.pdf
AON7264CTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
8.1. Size:575K 1
aon7262e.pdf
AON7262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.2. Size:337K aosemi
aon7262e.pdf
AON7262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
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