All MOSFET. AONS62602 Datasheet

 

AONS62602 Datasheet and Replacement


   Type Designator: AONS62602
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 1510 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: DFN5X6
      - MOSFET Cross-Reference Search

 

AONS62602 Datasheet (PDF)

 ..1. Size:337K  aosemi
 aons62602.pdf pdf_icon

AONS62602

AONS62602TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 6.1. Size:364K  aosemi
 aons62606.pdf pdf_icon

AONS62602

AONS6260660V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 7.1. Size:329K  aosemi
 aons62618.pdf pdf_icon

AONS62602

AONS62618TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:362K  aosemi
 aons62614t.pdf pdf_icon

AONS62602

AONS62614TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 170A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: G16P03S | 6N65KL-TMS-T

Keywords - AONS62602 MOSFET datasheet

 AONS62602 cross reference
 AONS62602 equivalent finder
 AONS62602 lookup
 AONS62602 substitution
 AONS62602 replacement

 

 
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