AOTF292L MOSFET. Datasheet pdf. Equivalent
Type Designator: AOTF292L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 557 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO220F
AOTF292L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOTF292L Datasheet (PDF)
aotf292l.pdf
AOT292L/AOB292L/AOTF292LTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V)
aotf292l.pdf
isc N-Channel MOSFET Transistor AOT292LFEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
aot29s50l aob29s50l aotf29s50l aotf29s50.pdf
AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50TM500V 29A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 600VThe AOT29S50L & AOB29S50L & AOTF29S50L &AOTF29S50 have been fabricated using the advanced IDM 120AMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15levels of performance and robustness in switching Qg,typ 26.6nCappl
aob2910l aot2910l aotf2910l.pdf
AOT2910L/AOB2910L/AOTF2910L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2910L & AOB2910L & AOTF2910L uses trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
aotf2910l.pdf
AOT2910L/AOB2910L/AOTF2910L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2910L & AOB2910L & AOTF2910L uses trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
aotf298l.pdf
AOT298L/AOB298L/AOTF298L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT298L & AOB298L & AOTF298L uses Trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 58A/33Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
aotf2916l.pdf
AOT2916L/AOTF2916L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2916L & AOTF2916L uses trench MOSFET 100Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 23A / 17Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)
aotf29s50.pdf
AOT29S50/AOB29S50/AOTF29S50TM500V 29A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 600VThe AOT29S50 & AOB29S50 & AOTF29S50 have beenfabricated using the advanced MOSTM high voltage IDM 120Aprocess that is designed to deliver high levels of RDS(ON),max 0.15performance and robustness in switching applications. Qg,typ 26.6nCBy provi
aotf2918l.pdf
AOT2918L/AOB2918L/AOTF2918L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2918L & AOB2918L & AOTF2918L uses Trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
aotf290l.pdf
AOTF290L100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 72A Low Gate Charge RDS(ON) (at VGS=10V)
aot2916l aotf2916l.pdf
AOT2916L/AOTF2916L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2916L & AOTF2916L uses trench MOSFET 100Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 23A / 17Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)
aotf296l.pdf
AOTF296L100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 41A Low Gate Charge RDS(ON) (at VGS=10V)
aotf2910l.pdf
isc N-Channel MOSFET Transistor AOTF2910LFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
aotf298l.pdf
isc N-Channel MOSFET Transistor AOTF298LFEATURESDrain Current I = 33A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 14.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andge
aotf2916l.pdf
isc N-Channel MOSFET Transistor AOTF2916LFEATURES Drain-source on-resistance:RDS(on) 34m@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 V
aotf29s50.pdf
isc N-Channel MOSFET Transistor AOTF29S50FEATURESDrain Current I = 29A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
aotf2918l.pdf
isc N-Channel MOSFET Transistor AOTF2918LFEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
aotf290l.pdf
isc N-Channel MOSFET Transistor AOTF290LFEATURESDrain Current I = 72A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
aotf29s50l.pdf
isc N-Channel MOSFET Transistor AOTF29S50LFEATURESDrain Current I = 29A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
aotf296l.pdf
isc N-Channel MOSFET Transistor AOTF296LFEATURESDrain Current I = 41A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
