AOW292
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOW292
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4
V
|Id|ⓘ - Maximum Drain Current: 105
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 557
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0041
Ohm
Package:
TO262
AOW292
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOW292
Datasheet (PDF)
..1. Size:228K aosemi
aow292.pdf
AOW292100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 105A Low Gate Charge RDS(ON) (at VGS=10V)
..2. Size:283K inchange semiconductor
aow292.pdf
isc N-Channel MOSFET Transistor AOW292FEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
9.1. Size:251K aosemi
aow298.pdf
AOW298 100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOW298 uses Trench MOSFET technology that is 100Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 58Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)
9.2. Size:424K aosemi
aow296.pdf
AOW296/AOWF296TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology Low RDS(ON) RDS(ON) (at VGS=10V)
9.3. Size:253K aosemi
aow2918.pdf
AOW2918100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOW2918 uses Trench MOSFET technology that 100Vis uniquely optimized to provide the most efficient high ID (at VGS=10V) 90Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)
9.4. Size:251K aosemi
aow29s50.pdf
AOW29S50TM500V 29A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 600VThe AOW29S50 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 120Ahigh levels of performance and robustness in switching RDS(ON),max 0.15applications. Qg,typ 26.6nCBy providing low RDS(on), Qg and EOSS along with
9.5. Size:310K aosemi
aow290.pdf
AOW290100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 140A Low Gate Charge RDS(ON) (at VGS=10V)
9.6. Size:283K inchange semiconductor
aow298.pdf
isc N-Channel MOSFET Transistor AOW298FEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 14.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
9.7. Size:284K inchange semiconductor
aow296.pdf
isc N-Channel MOSFET Transistor AOW296FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener
9.8. Size:283K inchange semiconductor
aow2918.pdf
isc N-Channel MOSFET Transistor AOW2918FEATURESDrain Current I = 90A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera
9.9. Size:300K inchange semiconductor
aow29s50.pdf
isc N-Channel MOSFET Transistor AOW29S50FEATURESDrain Current I = 29A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
9.10. Size:283K inchange semiconductor
aow290.pdf
isc N-Channel MOSFET Transistor AOW290FEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
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