All MOSFET. AP9972GP Datasheet

 

AP9972GP Datasheet and Replacement


   Type Designator: AP9972GP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO220
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AP9972GP Datasheet (PDF)

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AP9972GP

AP9972GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAP9972 series are from Advanced Power innovated design and siliconprocess technology to achieve th

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AP9972GP

AP9972GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAP9972 series are from Advanced Power innovated design and siliconprocess technology to achieve th

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 ap9972gs p-hf.pdf pdf_icon

AP9972GP

AP9972GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 18m RoHS Compliant & Halogen-Free ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DSTO-263(S)ruggedized device design,

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AP9972GP

AP9972GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 18m Fast Switching Characteristic ID 60AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDrugge

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History: APM2317 | 3415 | 3080K | 2SK974S | RFP8P10 | BUK7Y08-40B | AP9971AGH-HF

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