AP3P9R0P
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP3P9R0P
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 54.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 63
A
Qgⓘ - Total Gate Charge: 44
nC
trⓘ - Rise Time: 60
nS
Cossⓘ -
Output Capacitance: 500
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
TO220
AP3P9R0P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP3P9R0P
Datasheet (PDF)
..1. Size:59K ape
ap3p9r0p.pdf
AP3P9R0PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest pos
7.1. Size:59K ape
ap3p9r0i.pdf
AP3P9R0IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -48AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest poss
7.2. Size:58K ape
ap3p9r0h.pdf
AP3P9R0HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the lowe
7.3. Size:57K ape
ap3p9r0jb.pdf
AP3P9R0JBHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest po
7.4. Size:58K ape
ap3p9r0m.pdf
AP3P9R0MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Lower On-resistance RDS(ON) 9mD Fast Switching Characteristic ID -13.5AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP3P9R0 series are from Advanced Power innovated design andsilicon process technolo
7.5. Size:58K ape
ap3p9r0j.pdf
AP3P9R0JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and silicon GDSTO-251(J)process technology to ach
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