AP70T03GJB PDF and Equivalents Search

 

AP70T03GJB Specs and Replacement

Type Designator: AP70T03GJB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 53 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO251S

AP70T03GJB substitution

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AP70T03GJB datasheet

 ..1. Size:175K  ape
ap70t03gjb.pdf pdf_icon

AP70T03GJB

AP70T03GJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 60A G RoHS Compliant & Halogen-Free S Description AP70T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos... See More ⇒

 5.1. Size:98K  ape
ap70t03gh-hf ap70t03gj-hf.pdf pdf_icon

AP70T03GJB

AP70T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, ruggedized device des... See More ⇒

 5.2. Size:202K  ape
ap70t03gj.pdf pdf_icon

AP70T03GJB

AP70T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G RoHS Compliant S Description AP70T03 series are from Advanced Power innovated design and silicon G D S TO-252(H) process technology to achieve the lowest possible on-... See More ⇒

 6.1. Size:121K  ape
ap70t03gi.pdf pdf_icon

AP70T03GJB

AP70T03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance ... See More ⇒

Detailed specifications: AP3P9R0J, AP3P9R0JB, AP3P9R0P, AP6679BGH, AP6679BGJ, AP6679BGJB, AP9561GJ, AP70T03GJ, IRF520, AP16N50I, AP0904GH, AP0904GJB, AP75T10GI, AP60T03GH, AP01N60J, AP9563GH, AP9563GJ

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