All MOSFET. AP70T03GJB Datasheet

 

AP70T03GJB MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP70T03GJB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO251S

 AP70T03GJB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP70T03GJB Datasheet (PDF)

 ..1. Size:175K  ape
 ap70t03gjb.pdf

AP70T03GJB AP70T03GJB

AP70T03GJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 60AG RoHS Compliant & Halogen-FreeSDescriptionAP70T03 series are from Advanced Power innovated designand silicon process technology to achieve the lowest pos

 5.1. Size:98K  ape
 ap70t03gh-hf ap70t03gj-hf.pdf

AP70T03GJB AP70T03GJB

AP70T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combination of fast switching,ruggedized device des

 5.2. Size:202K  ape
 ap70t03gj.pdf

AP70T03GJB AP70T03GJB

AP70T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60AG RoHS CompliantSDescriptionAP70T03 series are from Advanced Power innovated design and siliconGDS TO-252(H)process technology to achieve the lowest possible on-

 6.1. Size:121K  ape
 ap70t03gi.pdf

AP70T03GJB AP70T03GJB

AP70T03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30VD Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance

 6.2. Size:98K  ape
 ap70t03gh.pdf

AP70T03GJB AP70T03GJB

AP70T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combination of fast switching,ruggedized device design, low on-resistanc

 6.3. Size:98K  ape
 ap70t03gp ap70t03gs.pdf

AP70T03GJB AP70T03GJB

AP70T03GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching Speed ID 60AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-263(S)designer with the best combination of fast switching,ruggedized device design, low on-re

 6.4. Size:843K  cn vbsemi
 ap70t03gh.pdf

AP70T03GJB AP70T03GJB

AP70T03GHwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOL

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top