AP9870GH
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9870GH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 27.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 18
A
Qgⓘ - Total Gate Charge: 8
nC
trⓘ - Rise Time: 23
nS
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042
Ohm
Package:
TO252
AP9870GH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9870GH
Datasheet (PDF)
..1. Size:230K ape
ap9870gh.pdf
AP9870GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 42m Fast Switching Characteristic ID 18AG RoHS Compliant & Halogen-FreeSDescriptionAP9870 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest pos
0.1. Size:93K ape
ap9870gh-hf.pdf
AP9870GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 42m Fast Switching Characteristic ID 18AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DSTO
9.1. Size:93K ape
ap9871gh-hf.pdf
AP9871GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 72m Fast Switching Characteristic ID 9.3AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DST
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