AP4028EM
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP4028EM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 12.8
A
Qgⓘ - Total Gate Charge: 12.5
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 185
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
SO8
AP4028EM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4028EM
Datasheet (PDF)
..1. Size:223K ape
ap4028em.pdf
AP4028EMHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 9mD Low On-resistance ID 12.8AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4028 series are from Advanced Power innovated design andGsilicon process technology
7.1. Size:251K ape
ap4028eh.pdf
AP4028EHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 45A RoHS Compliant & Halogen-Free DescriptionAP4028 series are from Advanced Power innovated design and siliconGDprocess techno
7.2. Size:149K ape
ap4028ejb.pdf
AP4028EJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VD Simple Drive Requirement RDS(ON) 9mG Fast Switching Characteristic ID 45A RoHS Compliant & Halogen-FreeSDescriptionAP4028 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possi
7.3. Size:122K ape
ap4028eyt.pdf
AP4028EYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 14.5AGS DDDescriptionDDAP4028 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-resist
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