AP3700M MOSFET. Datasheet pdf. Equivalent

   Type Designator: AP3700M
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 7.8 A
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SO8

AP3700M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS