AP6C036M Datasheet. Specs and Replacement

Type Designator: AP6C036M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: SO8

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AP6C036M datasheet

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AP6C036M

AP6C036M Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60V D2 D2 Low Gate Charge D1 RDS(ON) 36m D1 Fast Switching Performance ID3 6A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -60V G1 S1 SO-8 RDS(ON) 72m Description ID3 -4.2A AP6C036 series are from Advanced Power ... See More ⇒

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AP6C036M

AP6C036H Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60V D1/D2 Good Thermal Performance RDS(ON) 36m Fast Switching Performance ID3 12A S1 RoHS Compliant & Halogen-Free P-CH BVDSS -60V G1 S2 RDS(ON) 75m G2 Description ID3 -12A TO-252-4L Advanced Power MOSFETs from APEC ... See More ⇒

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AP6C036M

AP6C072M Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60V D2 D2 Low Gate Charge D1 RDS(ON) 36m D1 Fast Switching Performance ID 5.4A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -60V G1 S1 SO-8 RDS(ON) 72m Description ID -3.9A AP6C072 series are from Advanced Power ... See More ⇒

Detailed specifications: AP4513GM, AP4525GEM, AP4532GM, AP4533GEM, AP4578GM, AP4963GEM, AP5322GM, AP6A100M, IRFB7545, AP6C072M, AP8N010LM, AP9926GM, AP9936GM, AP9938GEM, AP9960GM, AP9962AGM, AP9971AGM

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