All MOSFET. AP6C036M Datasheet

 

AP6C036M Datasheet and Replacement


   Type Designator: AP6C036M
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: SO8

 AP6C036M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP6C036M Datasheet (PDF)

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AP6C036M

AP6C036M Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60V D2 D2 Low Gate Charge D1 RDS(ON) 36m D1 Fast Switching Performance ID3 6A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -60V G1 S1 SO-8 RDS(ON) 72m Description ID3 -4.2A AP6C036 series are from Advanced Power ... See More ⇒

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AP6C036M

AP6C036H Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60V D1/D2 Good Thermal Performance RDS(ON) 36m Fast Switching Performance ID3 12A S1 RoHS Compliant & Halogen-Free P-CH BVDSS -60V G1 S2 RDS(ON) 75m G2 Description ID3 -12A TO-252-4L Advanced Power MOSFETs from APEC ... See More ⇒

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AP6C036M

AP6C072M Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 60V D2 D2 Low Gate Charge D1 RDS(ON) 36m D1 Fast Switching Performance ID 5.4A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -60V G1 S1 SO-8 RDS(ON) 72m Description ID -3.9A AP6C072 series are from Advanced Power ... See More ⇒

Datasheet: AP4513GM , AP4525GEM , AP4532GM , AP4533GEM , AP4578GM , AP4963GEM , AP5322GM , AP6A100M , IRFB7545 , AP6C072M , AP8N010LM , AP9926GM , AP9936GM , AP9938GEM , AP9960GM , AP9962AGM , AP9971AGM .

History: AP3700M

Keywords - AP6C036M MOSFET datasheet

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