AP2302AGN PDF and Equivalents Search

 

AP2302AGN Specs and Replacement

Type Designator: AP2302AGN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: SOT23

AP2302AGN substitution

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AP2302AGN datasheet

 ..1. Size:176K  ape
ap2302agn.pdf pdf_icon

AP2302AGN

AP2302AGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 42m Surface Mount Package ID 4.6A S RoHS Compliant & Halogen-Free SOT-23 G D Description AP2302A series are from Advanced Power innovated design and silicon process technology to achieve the l... See More ⇒

 0.1. Size:94K  ape
ap2302agn-hf.pdf pdf_icon

AP2302AGN

AP2302AGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V D Lower Gate Charge RDS(ON) 42m Surface mount package ID 4.6A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resist... See More ⇒

 7.1. Size:2068K  cn apm
ap2302ai.pdf pdf_icon

AP2302AGN

AP2302AI 20V N-Channel Enhancement Mode MOSFET Description The AP2302AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =3.2A DS D R ... See More ⇒

 8.1. Size:96K  ape
ap2302gn-hf.pdf pdf_icon

AP2302AGN

AP2302GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline D RDS(ON) 85m Surface mount package ID 3.2A RoHS Compliant S SOT-23 G Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, D low on-resistanc... See More ⇒

Detailed specifications: AP6N090LK, AP6P250K, AP04N20GK, APA2N70K, AP18P10GK, AP70SL1K4BK2, AP10P500N, AP10TN135N, IRFB4110, AP2304AGN, AP2304GN, AP2306AGEN, AP2316GN, AP2323AGN, AP2323GN, AP2326GN, AP2328GN

Keywords - AP2302AGN MOSFET specs

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