AP2304GN Datasheet and Replacement
Type Designator: AP2304GN
Marking Code: N4SS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 5.9 nC
tr ⓘ - Rise Time: 11.5 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
Package: SOT23
AP2304GN substitution
AP2304GN Datasheet (PDF)
ap2304gn.pdf

AP2304GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD Small package outline RDS(ON) 117m Surface mount package ID 2.7AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, lo
ap2304gn.pdf

AP2304GNwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conve
ap2304gn-hf.pdf

AP2304GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25V Small package outline RDS(ON) 117mD Surface mount package ID 2.7A RoHS Compliant & Halogen-FreeSSOT-23GDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Dl
ap2304agn.pdf

AP2304AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 117m Surface Mount Device ID 2.5AS RoHS CompliantSOT-23GDDescriptionAP2304A series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possibl
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History: MCH3479
Keywords - AP2304GN MOSFET datasheet
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History: MCH3479



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